SILICON NITRIDE PASSIVE PIC

The SiN Passive PIC consists of two silicon nitride waveguides and a sensing trench that completely removes the cladding oxide over the first nitride waveguide. In this technology the films have been developed to produce ultra-low loss and ultra-low fluorescence for use in various sensing applications. The platform also includes very thick (>4um) cladding oxide.

On the SiN passive PIC build, silicon nitride waveguide propagation loss is <0.25 dB/cm.

Design Information

The TLX SiN component library comprises passive components designed to operate from 700 nm to 1625 nm (from the I-band to the L-band) on AIM Photonics' silicon nitride passive PIC technology platform.

The Spark Photonics SiN component library focuses on operating wavelengths in the 700-1300 nm range (I/Z/Y/J bands) on AIM Photonics' silicon nitride passive PIC technology platform.

Customization Available

• Adjust waveguide thicknesses

• Adjust vertical spacing between waveguides

While MPWs typically follow a standard process flow that designers cannot modify, AIM Photonics has developed a “bite size” custom offering where designers can make minor changes to the process flow for an additional fee. This is not a full custom run, and the modification must be something the fab team can execute without development work.

The fee typically varies between $10,000 - $50,000 depending on the desired customization(s).

Please contact us well in advance of the design due date to ensure the fab team understands your request and can properly quote the work.

Additional Information

SiN Data Sheet (PDF)

For more information about the silicon nitride technology offering, see “A low-loss SiN photonic integrated circuit foundry platform for waveguide-enhanced Raman spectroscopy” https://doi.org/10.1117/12.2582529

Schedule

Pricing

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